Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides

被引：0

作者：

Ogata, Tamotsu ^{[1
]}

Inoue, Masao ^{[1
]}

Nakamura, Tadashi ^{[2
]}

Tsuji, Naoki ^{[3
]}

Kobayashi, Kiyoteru ^{[3
]}

Kawase, Kazuo ^{[4
]}

Kurokawa, Hiroshi ^{[4
]}

Kaneoka, Tatsunori ^{[1
]}

Wake, Setsuo ^{[1
]}

Arima, Hideaki ^{[1
]}

机构：

[1] ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[2] Ryoden Semiconductor System Engineering Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[3] Memory IC Div., Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[4] Advanced Technology R and D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661-8661, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 3 A期

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页码：1027 / 1031