Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides

被引：0

作者：

Ogata, Tamotsu ^{[1
]}

Inoue, Masao ^{[1
]}

Nakamura, Tadashi ^{[2
]}

Tsuji, Naoki ^{[3
]}

Kobayashi, Kiyoteru ^{[3
]}

Kawase, Kazuo ^{[4
]}

Kurokawa, Hiroshi ^{[4
]}

Kaneoka, Tatsunori ^{[1
]}

Wake, Setsuo ^{[1
]}

Arima, Hideaki ^{[1
]}

机构：

[1] ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[2] Ryoden Semiconductor System Engineering Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[3] Memory IC Div., Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[4] Advanced Technology R and D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661-8661, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 3 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1027 / 1031

共 31 条

[1] Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides
Ogata, T
Inoue, M
Nakamura, T
Tsuji, N
Kobayashi, K
Kawase, K
Kurokawa, H
Kaneoka, T
Wake, S
Arima, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1027 - 1031
[2] Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
Ogata, T
Inoue, M
Nakamura, T
Tsuji, N
Kobayashi, K
Kawase, K
Kurokawa, H
Kaneoka, T
Ohno, Y
Miyoshi, H
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 597 - 600
[3] Spectroscopic characterization of stress-induced leakage current in sub 5-nm-thick silicon oxide film
Komiya, K
Omura, Y
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2593 - 2601
[4] Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors
Fischetti, Massimo V.
Fu, Bo
Vandenberghe, William G.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3862 - 3869
[5] Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current
Arakawa, T
Matsumoto, R
APPLIED SURFACE SCIENCE, 1997, 113 : 605 - 609
[6] Femtosecond laser-induced dewetting of sub-10-nm nanostructures on silicon in ambient air
Luo, Hao
Wang, Xiaoduo
Wen, Yangdong
Qiu, Ye
Liu, Lianqing
Yu, Haibo
APL PHOTONICS, 2024, 9 (07)
[7] Modeling of stress-induced leakage current and impact ionization in MOS devices
Ielmini, D
Spinelli, AS
Lacaita, AL
Ghidini, G
SOLID-STATE ELECTRONICS, 2002, 46 (03) : 417 - 422
[8] A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
De Salvo, B
Ghibaudo, G
Pananakakis, G
Guillaumot, B
Reimbold, G
SOLID-STATE ELECTRONICS, 2000, 44 (06) : 895 - 903
[9] Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub-10-nm freestanding Pt nanowires
Frabboni, S.
Gazzadi, G. C.
Felisari, L.
Spessot, A.
APPLIED PHYSICS LETTERS, 2006, 88 (21)
[10] Conduction mechanism and origin of stress-induced leakage current in thin silicon dioxide films
Kimura, M
Ohmi, T
JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6360 - 6369

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