Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides

被引：0

作者：

Ogata, Tamotsu ^{[1
]}

Inoue, Masao ^{[1
]}

Nakamura, Tadashi ^{[2
]}

Tsuji, Naoki ^{[3
]}

Kobayashi, Kiyoteru ^{[3
]}

Kawase, Kazuo ^{[4
]}

Kurokawa, Hiroshi ^{[4
]}

Kaneoka, Tatsunori ^{[1
]}

Wake, Setsuo ^{[1
]}

Arima, Hideaki ^{[1
]}

机构：

[1] ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[2] Ryoden Semiconductor System Engineering Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[3] Memory IC Div., Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[4] Advanced Technology R and D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661-8661, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 3 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1027 / 1031

共 31 条

[11] Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6nm Oxide Films
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[12] Charge transport mechanism of stress induced leakage current in thermal silicon oxide
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[13] The Impact of AIN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT
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[14] Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss
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JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6285 - 6293
[15] Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon
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[16] A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films
Endoh, T
Chiba, T
Sakuraba, H
Lenski, M
Masuoka, F
JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2095 - 2099
[17] Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches
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Olszewski, Z.
Houlihan, R.
O'Mahony, C.
Blake, A.
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APPLIED PHYSICS LETTERS, 2015, 106 (17)
[18] Low voltage stress-induced leakage current in 1.4-2.1 nm SiON and HfSiON gate dielectric layers
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[19] The gate oxide lifetime limited by 'B-mode' stress induced leakage current and the scaling limit of silicon dioxides in the direct tunnelling regime
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (05) : 478 - 484
[20] Microscopic analysis of stress-induced leakage current in stressed gate SiO2 films using conductive atomic force microscopy
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