Impact of thermal nitridation on microscopic stress-induced leakage current in sub-10-nm silicon dioxides

被引：0

作者：

Ogata, Tamotsu ^{[1
]}

Inoue, Masao ^{[1
]}

Nakamura, Tadashi ^{[2
]}

Tsuji, Naoki ^{[3
]}

Kobayashi, Kiyoteru ^{[3
]}

Kawase, Kazuo ^{[4
]}

Kurokawa, Hiroshi ^{[4
]}

Kaneoka, Tatsunori ^{[1
]}

Wake, Setsuo ^{[1
]}

Arima, Hideaki ^{[1
]}

机构：

[1] ULSI Development Center, Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[2] Ryoden Semiconductor System Engineering Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[3] Memory IC Div., Mitsubishi Electric Corp., 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

[4] Advanced Technology R and D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 661-8661, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 3 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1027 / 1031

共 31 条

[21] Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2-2.5 nm) after constant voltage stresses
Petit, C.
Zander, D.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (10) : 1165 - 1173
[22] Intrinsic and stress-induced traps in the direct tunneling current of 2.3-3.8nm oxides and unified characterization methodologies of sub-3nm oxides
Liu, CT
Ghetti, A
Ma, Y
Alers, G
Chang, CP
Cheung, KP
Colonell, JI
Lai, WYC
Pai, CS
Liu, R
Vaidya, H
Clemens, JT
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 85 - 88
[23] Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT HfO2 pFETs
O'Connor, Robert
Hughes, Greg
Kauerauf, Thomas
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (02) : 290 - 294
[24] Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
Samanta, Piyas
Man, Tsz Yin
Chan, Alain Chun Keung
Zhang, Qingchun
Zhu, Chunxiang
Chan, Mansun
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (10) : 1393 - 1401
[25] Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
Chim, WK
Lim, PS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) : 473 - 481
[26] Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
Lim, PS
Chim, WK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2652 - 2655
[27] Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling
Chim, WK
Lim, PS
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1577 - 1588
[28] Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5 nm) nitrided oxides
Chim, WK
Lim, PS
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1304 - 1313
[29] Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling
Lenski, M
Endoh, T
Masuoka, F
JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5238 - 5245
[30] State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2 Films in a Metal-Oxide-Silicon Structure
Ishida, Takeshi
Tega, Naoki
Mori, Yuki
Miki, Hiroshi
Mine, Toshiyuki
Kume, Hitoshi
Torii, Kazuyoshi
Yamada, Ren-ichi
Shiraishi, Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)

← 1 2 3 4 →