Characterizing and Optimizing LDPC Performance on 3D NAND Flash Memories

被引:0
|
作者
Li, Qiao [1 ]
Chen, Yu [1 ]
Wu, Guanyu [1 ]
Du, Yajuan [2 ]
Ye, Min [3 ]
Gan, Xinbiao [4 ]
Zhang, Jie [5 ]
Shen, Zhirong [1 ]
Shu, Jiwu [1 ]
Xue, Chun [6 ]
机构
[1] Xiamen Univ, Sch Informat, Xiamen, Peoples R China
[2] Wuhan Univ Technol, Sch Comp Sci & Technol, Wuhan, Peoples R China
[3] YEESTOR Microelect Co Ltd, Shenzhen, Peoples R China
[4] Natl Univ Def Technol, Changsha, Peoples R China
[5] Peking Univ, Sch Comp Sci, Beijing, Peoples R China
[6] Mohamed Bin Zayed Univ Artificial Intelligence, Abu Dhabi, U Arab Emirates
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
LDPC; flash memory; SSD; 3D NAND; TEMPORARY READ ERRORS;
D O I
10.1145/3663478
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
With the development of NAND flash memories' bit density and stacking technologies, while storage capacity keeps increasing, the issue of reliability becomes increasingly prominent. Low-density parity check (LDPC) code, as a robust error-correcting code, is extensively employed in flash memory. However, when the RBER is prohibitively high, LDPC decoding would introduce long latency. To study how LDPC performs on the latest 3D NAND flash memory, we conduct a comprehensive analysis of LDPC decoding performance using both the theoretically derived threshold voltage distribution model obtained through modeling (Modeling-based method) and the actual voltage distribution collected from on-chip data through testing (Ideal case). Based on LDPC decoding results under various interference conditions, we summarize four findings that can help us gain a better understanding of the characteristics of LDPC decoding in 3D NAND flash memory. Following our characterization, we identify the differences in LDPC decoding performance between the Modeling-based method and the Ideal case. Due to the accuracy of initial probability information, the threshold voltage distribution derived through modeling deviates by certain degrees from the actual threshold voltage distribution. This leads to a performance gap between using the threshold voltage distribution derived from the Modeling-based method and the actual distribution. By observing the abnormal behaviors in the decoding with the Modeling-based method, we introduce an Offsetted Read Voltage (Delta RV) method for optimizing LDPC decoding performance by offsetting the reading voltage in each layer of a flash block. The evaluation results show that our Delta RV method enhances the decoding performance of LDPC on the Modeling-based method by reducing the total number of sensing levels needed for LDPC decoding by 0.67% to 18.92% for different interference conditions on average, under the P/E cycles from 3,000 to 7,000.
引用
收藏
页数:26
相关论文
共 50 条
  • [21] Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
    Liu, Weihua
    Wu, Fei
    Zhang, Meng
    Wang, Yifei
    Lu, Zhonghai
    Lu, Xiangfeng
    Xie, Changsheng
    2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2019, : 312 - 315
  • [22] 3D NAND Flash Status and Trends
    Heineck, Lars
    Liu, Jin
    2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022), 2022, : 1 - 4
  • [23] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories
    Yasufuku, Tadashi
    Ishida, Koichi
    Miyamoto, Shinji
    Nakai, Hiroto
    Takamiya, Makoto
    Sakurai, Takayasu
    Takeuchi, Ken
    2009 IEEE INTERNATIONAL CONFERENCE ON 3D SYSTEMS INTEGRATION, 2009, : 49 - +
  • [24] Transient program operation model considering distribution of electrons in 3D NAND flash memories
    Lee D.C.
    Shin H.
    IEICE Electronics Express, 2021, 17 (23):
  • [25] Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories
    Postel-Pellerin, J.
    Lalande, F.
    Canet, P.
    Bouchakour, R.
    Jeuland, F.
    Bertello, B.
    Villard, B.
    MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 1056 - 1059
  • [26] VaLLR: Threshold Voltage Distribution Aware LLR Optimization to Improve LDPC Decoding Performance for 3D TLC NAND Flash
    Cui, Lanlan
    Wu, Fei
    Liu, Xiaojian
    Zhang, Meng
    Xie, Changsheng
    2019 IEEE 37TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD 2019), 2019, : 668 - 671
  • [27] 3D RRAM DESIGN AND BENCHMARK WITH 3D NAND FLASH
    Chen, Pai-Yu
    Xu, Cong
    Xie, Yuan
    Yu, Shimeng
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [28] Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation
    Nainani, A.
    Palit, S.
    Singh, P. K.
    Ganguly, U.
    Krishna, N.
    Vasi, J.
    Mahapatra, S.
    2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 947 - +
  • [29] Transient program operation model considering distribution of electrons in 3D NAND flash memories
    Lee, Dong Chan
    Shin, Hyungcheol
    IEICE ELECTRONICS EXPRESS, 2020, 17 (23):
  • [30] Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories
    Mizoguchi, Kyoji
    Takahashi, Tomonori
    Aritome, Seiichi
    Takeuchi, Ken
    2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2017, : 119 - 122