Transient program operation model considering distribution of electrons in 3D NAND flash memories

被引：0
|
作者：
Lee D.C. [1 ]
Shin H. [1 ]
机构：
[1] Inter-University Semiconductor Research Center (ISRC), School of Electrical Engineering and Computer Science, Seoul National University, Seoul
来源：
IEICE Electronics Express | 2021年 / 17卷 / 23期
关键词：
3D NAND flash memory; Electron distribution; Poisson equation; Program operation; Transient dynamics;
D O I：
10.1587/ELEX.17.20200335
中图分类号：
学科分类号：
摘要：
We developed a new compact model for the program operation of 3D NAND Flash memories. A modified 1-D Poisson equation was proposed that shows better accuracy than the existing model by reflecting the spatial distribution of electrons trapped by the program operation. Under various conditions of program voltage (VPGM) and program time (tPGM), the threshold voltage shift (∆Vt ) was extracted by TCAD (Technology Computer-Aided Design) simulation, and we used this data to validate our new model. It also provides validity of the model for program operation in 3D NAND flash memory along with various TCAD analysis data. Copyright © 2020 The Institute of Electronics, Information and Communication Engineers
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