Transient program operation model considering distribution of electrons in 3D NAND flash memories

被引：0
|
作者：
Lee, Dong Chan [1 ,2 ]
Shin, Hyungcheol [1 ,2 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151747, South Korea
来源：
IEICE ELECTRONICS EXPRESS | 2020年 / 17卷 / 23期
关键词：
3D NAND flash memory; program operation; electron distribution; transient dynamics; poisson equation; SEMIANALYTICAL MODEL; SI/SIO2; INTERFACE; NORDHEIM;
D O I：
10.1587/elex.17.20200335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed a new compact model for the program operation of 3D NAND Flash memories. A modified 1-D Poisson equation was proposed that shows better accuracy than the existing model by reflecting the spatial distribution of electrons trapped by the program operation. Under various conditions of program voltage (V-PGM) and program time (t(PGM)), the threshold voltage shift (Delta V-t) was extracted by TCAD (Technology Computer-Aided Design) simulation, and we used this data to validate our new model. It also provides validity of the model for program operation in 3D NAND flash memory along with various TCAD analysis data.
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页数：5
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