Growth of SiGe by D-UHV/CVD at low temperature

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作者：
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
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Pan Tao Ti Hsueh Pao | 2008年 / 10卷 / 1889-1892期
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Si-Ge alloys;
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页码：1889 / 1892
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