Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures

被引：2
|
作者：
Roldan, JM
Cressler, JD
Niu, G
Clark, SD
Nguyen-Ngoc, D
机构：
[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA
[2] USN, Ctr Surface Warfare, Crane, IN 47522 USA
[3] IBM Microelect, Hopewell Junction, NY 12533 USA
来源：
JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P3期
关键词：
D O I：
10.1051/jp4:1998323
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper presents for the first time the effects of ionizing gamma rays on a high-performance UHV/CVD SiGe BiCMOS technology irradiated at both 300K and 77K. The SiGe HBTs show a degradation in current gain below 10% at 300K and no observable shifts in current gain at 77K. The Si pFETs are radiation hard to 1.0 Mrad(Si) at both 300K and 77K, while the Si nFETs are able to withstand 100 krad(Si). In this work, we examine the total dose response of SiGe HBTs and concentrate on the post-radiation behavior of the nFETs and pFETs irradiated under bias at both 300K and 77K.
引用
收藏
页码：99 / 102
页数：4
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