Lateral silicon field-emission devices using electron beam lithography

被引：0
|
作者：
Han, Sangyeon [1 ]
Yang, Sun-A [1 ,4 ]
Hwang, Taekeun [1 ,5 ]
Lee, Jongho [2 ]
Lee, Jong Duk [3 ]
Shin, Hyungcheol [1 ]
机构：
[1] Department of Electrical Engineering, Korea Adv. Inst. Sci. and Technol., 373-1, Kusong-dong, Yusong-gu, Taejon, 305-701, Korea, Republic of
[2] School of Electrical Engineering, Wonkwang University, Iksan, Chonpuk, 570-749, Korea, Republic of
[3] School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea, Republic of
[4] Samsung Display Devices Co., Ltd., Suwon, Kyungki, 442-391, Korea, Republic of
[5] Hyundai Microelectronics Co., Ltd., Cheongju, Chungbuk, 361-480, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 A期
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摘要：
6
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页码：2556 / 2559
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