Lateral silicon field-emission devices using electron beam lithography

被引：0
|
作者：
Han, Sangyeon [1 ]
Yang, Sun-A [1 ,4 ]
Hwang, Taekeun [1 ,5 ]
Lee, Jongho [2 ]
Lee, Jong Duk [3 ]
Shin, Hyungcheol [1 ]
机构：
[1] Department of Electrical Engineering, Korea Adv. Inst. Sci. and Technol., 373-1, Kusong-dong, Yusong-gu, Taejon, 305-701, Korea, Republic of
[2] School of Electrical Engineering, Wonkwang University, Iksan, Chonpuk, 570-749, Korea, Republic of
[3] School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea, Republic of
[4] Samsung Display Devices Co., Ltd., Suwon, Kyungki, 442-391, Korea, Republic of
[5] Hyundai Microelectronics Co., Ltd., Cheongju, Chungbuk, 361-480, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
页码：2556 / 2559
相关论文
共 50 条
  • [31] ENGINEERING LATERAL QUANTUM INTERFERENCE DEVICES USING ELECTRON-BEAM LITHOGRAPHY AND MOLECULAR-BEAM EPITAXY
    ALLEE, DR
    CHOU, SY
    HARRIS, JS
    PEASE, RFW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2015 - 2019
  • [32] Applications of Electron Holography Using a Field-Emission Electron Microscope
    Tonomura, Akira
    Microscopy, 1984, 33 (02) : 101 - 115
  • [33] Improved resolution in field-emission lithography machines
    Chisholm, T
    Wallman, BA
    Liu, HN
    Munro, E
    Rouse, J
    Zhu, XQ
    CHARGED-PARTICLE OPTICS II, 1996, 2858 : 146 - 155
  • [34] LATERAL FIELD-EMISSION DEVICES WITH SUBTENTH-MICRON EMITTER TO ANODE SPACING
    ORO, JA
    BALL, DD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 464 - 467
  • [35] NUMERICAL FIELD CALCULATION IN FIELD-EMISSION DEVICES
    KASPER, E
    OPTIK, 1979, 54 (02): : 135 - 147
  • [36] ELECTRON-MICROSCOPES USING FIELD-EMISSION SOURCE
    CREWE, AV
    SURFACE SCIENCE, 1975, 48 (01) : 152 - 160
  • [37] REDUCTION OF DIVERGENCE OF AN ELECTRON-BEAM EMITTED BY A FIELD-EMISSION CATHODE
    PAUTOV, DM
    SOKOLSKA.IL
    SOVIET PHYSICS TECHNICAL PHYSICS-USSR, 1972, 16 (09): : 1581 - &
  • [38] EXPLOSIVE NOISE IN FIELD-EMISSION DEVICES
    BAKHTIZIN, PZ
    GOTS, SS
    RADIOTEKHNIKA I ELEKTRONIKA, 1981, 26 (11): : 2390 - 2397
  • [39] High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology
    Lenk, Claudia
    Krivoshapkina, Yana
    Hofmann, Martin
    Lenk, Steve
    Ivanov, Tzvetan
    Rangelow, Ivo W.
    Ahmad, Ahmad
    Reum, Alexander
    Holz, Mathias
    Glinsner, Thomas
    Eibelhuber, Martin
    Treiblmayr, Dominik
    Schamberger, Barbara
    Chouiki, Mustapha
    Chan, Boon Teik
    el Otell, Ziad
    de Marneffe, Jean-Francois
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (02):
  • [40] A THERMALLY ASSISTED FIELD-EMISSION ELECTRON-BEAM EXPOSURE SYSTEM
    NAKAZAWA, H
    TAKEMURA, H
    ISOBE, M
    NAKAGAWA, Y
    SHEARER, MH
    THOMPSON, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2019 - 2022
12345