Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

被引：0

作者：

Ono, Yukinori ^{[1
]}

Nishiguchi, Katsuhiko ^{[1
]}

Inokawa, Hiroshi ^{[1
]}

Horiguchi, Seiji ^{[2
]}

Takahashi, Yasuo ^{[3
]}

机构：

[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[2] Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University, 1-1 Tegata-gakuen-machi, Akita-shi, Akita 010-8502, Japan

[3] Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Hokkaido 060-0814, Japan

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 2588-2591期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Diffusion - Fabrication - Gates (transistor) - Interfaces (materials) - MOSFET devices - Silicon - Silicon on insulator technology - Substrates

引用

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