Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

被引：0
|
作者：
Ono, Yukinori [1 ]
Nishiguchi, Katsuhiko [1 ]
Inokawa, Hiroshi [1 ]
Horiguchi, Seiji [2 ]
Takahashi, Yasuo [3 ]
机构：
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[2] Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University, 1-1 Tegata-gakuen-machi, Akita-shi, Akita 010-8502, Japan
[3] Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Hokkaido 060-0814, Japan
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 2588-2591期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diffusion - Fabrication - Gates (transistor) - Interfaces (materials) - MOSFET devices - Silicon - Silicon on insulator technology - Substrates
引用
收藏
相关论文
共 50 条
  • [41] Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Jung, YoungChai
    Cho, KeunHwi
    Hwang, SungWoo
    Ahn, David
    Yu, YunSeop
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)
  • [42] Impact of Local High-k Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
    Omura, Yasuhisa
    Hayashi, Osanori
    Nakano, Shunsuke
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0443031 - 0443036
  • [43] Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Yang, J
    Neudeck, GW
    Denton, JP
    APPLIED PHYSICS LETTERS, 2000, 77 (24) : 4034 - 4036
  • [44] Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
    Kadotani, Naotoshi
    Ohashi, Teruyuki
    Takahashi, Tsunaki
    Oda, Shunri
    Uchida, Ken
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [45] Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Uchida, Ken
    Koga, Junji
    Takagi, Shin-Ichi
    Journal of Applied Physics, 2007, 102 (07):
  • [46] Transconductance oscillations in metal-oxide-semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels
    Takahashi, T
    Miura-Mattausch, M
    Omura, Y
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1458 - 1460
  • [47] Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Maekawa, Keiichi
    Makiyama, Hideki
    Yamamoto, Yoshiki
    Hasegawa, Takumi
    Okanishi, Shinobu
    Sonoda, Kenichiro
    Shinkawata, Hiroki
    Yamashita, Tomohiro
    Kamohara, Shiro
    Yamaguchi, Yasuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [48] Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Shoji, M
    Horiguchi, S
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6096 - 6101
  • [49] Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
    Zhou Hang
    Cui Jiang-Wei
    Zheng Qi-Wen
    Guo Qi
    Ren Di-Yuan
    Yu Xue-Feng
    ACTA PHYSICA SINICA, 2015, 64 (08)
  • [50] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Noborisaka, J.
    Nishiguchi, K.
    Ono, Y.
    Kageshima, H.
    Fujiwara, A.
    APPLIED PHYSICS LETTERS, 2011, 98 (03)
12345