An analytical symmetric double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model

A new complete and analytical drain current model for symmetric double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistors (SOI MOSFETs) is presented. The model applicable for digital/analog circuit simulation contains the following advanced features: precise description of the subthreshold, near threshold and above-threshold regions of operation by one single expression considering the source/drain resistance: inclusion of important short channel effects such as velocity saturation. drain induced barrier lowering and channel length modulation self-heating effect due to the low thermal conductivity of the buried oxide; impact-ionization of MOS devices and parasitic bipolar junction transistor associated with drain breakdown. It was developed using a quasi-two-dimensional Poisson equation.