Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

被引：0
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作者：
Liu, Chuan-Hsi [1 ]
Lee, Ming T. [1 ]
Lin, Chih-Yung [1 ]
Chen, Jenkon [1 ]
Loh, Y.T. [1 ]
Liou, Fu-Tai [1 ]
Schruefer, Klaus [2 ]
Katsetos, Anastasios A. [3 ]
Yang, Zhijian [3 ]
Rovedo, Nivo [3 ]
Hook, Terence B. [3 ]
Wann, Clement [3 ]
Chen, Tze-Chiang [3 ]
机构：
[1] Liu, Chuan-Hsi
[2] Lee, Ming T.
[3] Lin, Chih-Yung
[4] Chen, Jenkon
[5] Loh, Y.T.
[6] Liou, Fu-Tai
[7] Schruefer, Klaus
[8] Katsetos, Anastasios A.
[9] Yang, Zhijian
[10] Rovedo, Nivo
[11] Hook, Terence B.
[12] Wann, Clement
[13] Chen, Tze-Chiang
来源：
Liu, C.-H. | 1600年 / Japan Society of Applied Physics卷 / 41期
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页码：2423 / 2425
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