Difference analysis method for negative bias temperature instability lifetime prediction in deeply scaled pMOSFETs

被引：0
|
作者：
Liao, Yiming [1 ]
Ji, Xiaoli [1 ]
Zhang, Chengxu [1 ]
Huang, Xiaolin [1 ]
Xu, Yue [1 ]
Yan, Feng [1 ]
机构：
[1] College of Electronic Science and Engineering, Nanjing University, Nanjing,210093, China
来源：
Japanese Journal of Applied Physics | 2017年 / 56卷 / 04期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
04CD13
中图分类号：
学科分类号：
摘要：
Analysis method - Difference method - Electrical behaviors - Lifetime prediction - Quasi-static components - Threshold voltage shifts - Time dependence - Time-dependent fluctuations
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