Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe pMOSFETs

被引：16

作者：

Duan, Guo Xing ^{[1
]}

Hachtel, Jordan A. ^{[2
]}

Zhang, En Xia ^{[1
]}

Zhang, Cher Xuan ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Reed, Robert A. ^{[1
]}

Mitard, Jerome ^{[3
]}

Linten, Dimitri ^{[3
]}

Witters, Liesbeth ^{[3
]}

Collaert, Nadine ^{[3
]}

Mocuta, Anda ^{[3
]}

Thean, Aaron Voon-Yew ^{[3
]}

Chisholm, Matthew F. ^{[4
]}

Pantelides, Sokrates T. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] IMEC, B-3001 Leuven, Belgium

[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 04期

基金：

美国国家科学基金会;

关键词：

SiGe; HfO2; NBTI; oxygen vacancy defects; 1/f noise; defect energy distribution; relaxation-assisted transitions; 1/F NOISE; BORDER TRAPS; GATE DIELECTRICS; MOS DEVICES; OXIDE TRAPS; HYDROGEN; CHANNEL; STRESS; RELIABILITY; IRRADIATION;

D O I：

10.1109/TDMR.2016.2611533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (S-vd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below similar to 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.

引用

页码：541 / 548

页数：8

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