Analog Negative-Bias-Temperature-Instability Monitoring Circuit

被引：7
|
作者：
Yelten, Mustafa Berke [1 ]
Franzon, Paul D. [1 ]
Steer, Michael B. [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2012年 / 12卷 / 01期
关键词：
Amplifier; analog circuits; negative-bias temperature instability (NBTI); reliability; sensor; MODEL-BASED ANALYSIS; RELIABILITY; SIMULATION;
D O I：
10.1109/TDMR.2011.2178096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V-1 and is demonstrated through electrothermal stress on the amplifier circuit.
引用
收藏
页码：177 / 179
页数：3
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