Impact of Negative-Bias-Temperature-Instability on Channel Bulk of Polysilicon TFT by Gated PIN Diode Analysis

被引：1

作者：

Huang, Chen-Shuo ^{[1
,2
]}

Liu, Po-Tsun ^{[1
,3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

D O I：

10.1149/1.3551463

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, negative-bias-temperature-instability (NBTI) stress induced interface, and bulk states of polycrystalline silicon (poly-Si) film were identified by using gated poly-Si P-intrinsic-N (PIN) diodes. The generation of reverse current was proportional to the quantity of defects in the poly-Si of the gated diode device. Experimental results revealed NBTI degradation has a spatial distribution in the poly-Si film and demonstrated that the resultant generation of poly-Si bulk states causes the elevated drain leakage current of thin-film transistors (TFTs). We conclude that grain boundaries, with enriched hydrogenated silicon bonds in the bulk of poly-Si, interact electrochemically with hole-carriers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3551463] All rights reserved.

引用

页码：H194 / H196

页数：3

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