Effects of delay time and AC factors on negative bias temperature instability of PMOSFETs

被引：1
|
作者：
Li, Jih-San [1 ]
Chen, Main-Gwo [1 ]
Juan, Pi-Chun [2 ]
Su, Kuan-Cheng
机构：
[1] UMC, United Microelect Corp, Reliabil Engn Div, Sci Pk, Hsinchu 300, Taiwan
[2] Mingchi Univ Technol, Dept Mat Engn, Taipei, Taiwan
来源：
2006 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT | 2006年
关键词：
D O I：
10.1109/IRWS.2006.305202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed.
引用
收藏
页码：16 / +
页数：2
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