Difference analysis method for negative bias temperature instability lifetime prediction in deeply scaled pMOSFETs

被引：1

作者：

Liao, Yiming ^{[1
]}

Ji, Xiaoli ^{[1
]}

Zhang, Chengxu ^{[1
]}

Huang, Xiaolin ^{[1
]}

Xu, Yue ^{[1
]}

Yan, Feng ^{[1
]}

机构：

[1] Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

RANDOM TELEGRAPH NOISE; TO-DEVICE VARIATION; VARIABILITY;

D O I：

10.7567/JJAP.56.04CD13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fluctuation significantly affects the lifetime prediction of negative bias temperature instability (NBTI) for deeply scaled pMOSFETs. In this paper, we present a novel difference method to separate the time dependent fluctuation-related component from the NBTI quasi-static component in the threshold voltage shift. The extracted fluctuation-related component exhibits weak temperature and time dependences which is consistent with the characteristic of as-grown defect-induced trapping and detrapping while the quasi-static component presents electrical behaviors of generated-defect-induced NBTI degradation. On the basis of these results, a composite NBTI model is constructed and lifetime projection is derived for the small pMOSFETs. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

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