Structure and physical properties of Si-based BiFe0.95Mn0.05O3 ferroelectric capacitor using Ni-Al as the barrier layer
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作者:
Chen, Jian-Hui
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Chen, Jian-Hui
[1
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Liu, Bao-Ting
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Liu, Bao-Ting
[1
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Wei, Da-Yong
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Wei, Da-Yong
[1
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Wang, Kuan-Mao
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Wang, Kuan-Mao
[1
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Cui, Yong-Liang
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Cui, Yong-Liang
[1
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Wang, Ying-Long
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Wang, Ying-Long
[1
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Zhao, Qing-Xun
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Zhao, Qing-Xun
[1
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Wei, Meng-Yi
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College of Physics Science and Technology, Heibei University, Baoding 071002, ChinaCollege of Physics Science and Technology, Heibei University, Baoding 071002, China
Wei, Meng-Yi
[1
]
机构:
[1] College of Physics Science and Technology, Heibei University, Baoding 071002, China
Amorphous silicon - Amorphous films - Ferroelectricity - Ruthenium compounds;
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摘要:
SrRuO3 (SRO)/BiFe0.95Mn0.05O3(BFMO)/SRO heterostructure capacitors were fabricated on Si substrates using Ni-Al as the barrier layer between Si and SRO. X-ray diffraction (XRD) reveals that the Ni-Al barrier is amorphous, while well-crytallinized BFMO film is polycrystalline. A good saturated hysteresis loop coude be obtained from the SRO/BFMO/SRO ferroelectric capacitor at 5 kHz. The experiment results show that BFMO capacitor possesses very good fatigue-resistance. The leakage mechanism of the SRO/BFMO/SRO ferroelectric capacitor was studied. SRO/BFMO/SRO capacitor satisfied the ohmic conduction behavior at applied fields lower than 210 kV/cm and bulk-limited space-charge-limited conduction (SCLC) at the applied fields higher than 210 kV/cm.
机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Yin, J
Liu, ZG
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
Liu, ZG
Wu, ZC
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China