Structure and physical properties of Si-based BiFe0.95Mn0.05O3 ferroelectric capacitor using Ni-Al as the barrier layer

被引：0

作者：

Chen, Jian-Hui ^{[1
]}

Liu, Bao-Ting ^{[1
]}

Wei, Da-Yong ^{[1
]}

Wang, Kuan-Mao ^{[1
]}

Cui, Yong-Liang ^{[1
]}

Wang, Ying-Long ^{[1
]}

Zhao, Qing-Xun ^{[1
]}

Wei, Meng-Yi ^{[1
]}

机构：

[1] College of Physics Science and Technology, Heibei University, Baoding 071002, China

来源：

Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2011年 / 40卷 / 01期

关键词：

Amorphous silicon - Amorphous films - Ferroelectricity - Ruthenium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SrRuO3 (SRO)/BiFe0.95Mn0.05O3(BFMO)/SRO heterostructure capacitors were fabricated on Si substrates using Ni-Al as the barrier layer between Si and SRO. X-ray diffraction (XRD) reveals that the Ni-Al barrier is amorphous, while well-crytallinized BFMO film is polycrystalline. A good saturated hysteresis loop coude be obtained from the SRO/BFMO/SRO ferroelectric capacitor at 5 kHz. The experiment results show that BFMO capacitor possesses very good fatigue-resistance. The leakage mechanism of the SRO/BFMO/SRO ferroelectric capacitor was studied. SRO/BFMO/SRO capacitor satisfied the ohmic conduction behavior at applied fields lower than 210 kV/cm and bulk-limited space-charge-limited conduction (SCLC) at the applied fields higher than 210 kV/cm.

引用

页码：33 / 37

共 44 条

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