New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

被引：0
|
作者：
Lee, H.-M. [1 ]
Liu, C.-J. [1 ]
Hsu, C.-W. [1 ]
Liang, M.-S. [1 ]
King, Y.-C. [1 ]
Hsu, C.C.-H. [1 ]
机构：
[1] Microelectronics Laboratory, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 3 A期
关键词：
D O I：
10.1143/jjap.40.1218
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：1218 / 1221
相关论文
共 50 条
  • [41] Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal-oxide-semiconductor field-effect transistors
    Maitra, K
    Bhat, N
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1064 - 1068
  • [42] Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors
    Sugii, N
    Yamaguchi, S
    Nakagawa, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (03) : 155 - 159
  • [43] Analysis of electron Tunneling components in p+ poly-gate p-channel metal-oxide-semiconductor field-effect transistors from direct tunneling region to Fowler-Nordheim region
    Kang, Ting-Kuo
    Wu, San-Lein
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5B): : 3193 - 3196
  • [44] Systematical study of reliability issues in plasma-nitrided and thermally nitrided oxides for advanced dual-gate oxide p-channel metal-oxide-semiconductor field-effect transistors
    Lo, Wen-Cheng
    Wu, Shien-Yang
    Chang, Sun-Jay
    Chiang, Mu-Chi
    Lin, Chih-Yung
    Chao, Tien-Sheng
    Chang, Chun-Yen
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3A): : 1124 - 1128
  • [45] Characterizations of HfxMoyNz alloys as gate electrodes for n- and p-channel metal oxide semiconductor field effect transistors
    Lai, Chao Sung
    Peng, Hsing Kan
    Huang, Chin Wei
    Fan, Kung Ming
    Fang, Yu Ching
    Hsu, Li
    Wang, Hui Chun
    Lee, Chung Yuan
    Lin, Shian Jyh
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2442 - 2445
  • [46] Low-threshold-voltage HfOxN p-channel metal-oxide-semiconductor field-effect transistors with partially silicided platinum gate electrode
    Kadoshima, Masaru
    Nabatame, Toshihide
    Iwamoto, Kunihiko
    Mise, Nobuyuki
    Ota, Hiroyuki
    Ogawa, Arito
    Takahashi, Masashi
    Ikeda, Minoru
    Satake, Hideki
    Toriumi, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (8A): : 6225 - 6230
  • [47] Low-threshold-voltage HfOxN p-channel metal-oxide-semiconductor field-effect transistors with partially suicided platinum gate electrode
    Kadoshima, Masaru
    Nabatame, Toshihide
    Iwamoto, Kunihiko
    Mise, Nobuyuki
    Ota, Hiroyuki
    Ogawa, Arito
    Takahashi, Masashi
    Ikeda, Minoru
    Satake, Hideki
    Toriumi, Akira
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (8 A): : 6225 - 6230
  • [48] Enhanced hot-hole induced degradation of strained p-channel metal oxide semiconductor transistors in complementary metal oxide semiconductor technology with 2.0 nm gate oxide
    See, KS
    Lau, WS
    Lee, JG
    Toh, SL
    Liao, H
    Li, K
    Quek, EKB
    Chan, LH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08): : 5953 - 5958
  • [49] A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors
    Noor, Fatimah Arofiati
    Bimo, Christoforus
    Syuhada, Ibnu
    Winata, Toto
    Khairurrijal, Khairurrijal
    MICROELECTRONIC ENGINEERING, 2019, 216
  • [50] Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
    Beer, Chris
    Whall, Terry
    Parker, Evan
    Leadley, David
    De Jaeger, Brice
    Nicholas, Gareth
    Zimmerman, Paul
    Meuris, Marc
    Szostak, Slawomir
    Gluszko, Grzegorz
    Lukasiak, Lidia
    APPLIED PHYSICS LETTERS, 2007, 91 (26)
12345