New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

被引：0
|
作者：
Lee, H.-M. [1 ]
Liu, C.-J. [1 ]
Hsu, C.-W. [1 ]
Liang, M.-S. [1 ]
King, Y.-C. [1 ]
Hsu, C.C.-H. [1 ]
机构：
[1] Microelectronics Laboratory, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 3 A期
关键词：
D O I：
10.1143/jjap.40.1218
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：1218 / 1221
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