New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

被引：0

作者：

Lee, H.-M. ^{[1
]}

Liu, C.-J. ^{[1
]}

Hsu, C.-W. ^{[1
]}

Liang, M.-S. ^{[1
]}

King, Y.-C. ^{[1
]}

Hsu, C.C.-H. ^{[1
]}

机构：

[1] Microelectronics Laboratory, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 3 A期

关键词：

D O I：

10.1143/jjap.40.1218

中图分类号：

学科分类号：

摘要：

引用

页码：1218 / 1221

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