The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors

被引：0

作者：

曹艳荣 ^{[1
]}

马晓华 ^{[2
]}

郝跃 ^{[3
]}

田文超 ^{[1
]}

机构：

[1] School of Electronics&Mechanical Engineering,Xidian University

[2] School of Technical Physics,Xidian University

[3] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices

来源：

Chinese Physics B | 2010年 / 19卷 / 09期

关键词：

NBTI; 90nm; p-channel metal–oxide–semiconductor field-effect transistors (PMOS- FETs); model;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal- oxide-semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H+ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H+ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress.

引用

页码：568 / 573

页数：6

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