Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

被引：0

作者：

He, Yandong ^{[1
]}

Du, Gang ^{[1
]}

Yang, Yunxiang ^{[1
]}

Zhang, Ganggang ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

D O I：

10.1143/JJAP.49.04DC25

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental investigation on the negative bias temperature instability (NBTI) recovery of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with forward body bias (FBB) was conducted. Our results show that not only the positive gate bias but also the FBB will enhance the recovery of NBTI for pMOSFETs. A forward-body-bias-enhanced NBTI recovery mechanism was proposed with evidence of the NBTI recovery with FBB dependence and corresponding electron/hole density simulation results. Furthermore, the dynamic NBTI degradation was compared with and without FBB. The enhancement of NBTI recovery by FBB gives a comparable lifetime of zero body bias, which indicates that the forward body biasing technique can improve the drive capability without deteriorating NBTI performance. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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