DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

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作者：
Lee, Won Sang [1 ]
Chung, Ki Woong [1 ]
Shin, Moo Whan [2 ]
机构：
[1] Device and Materials Lab., RF Device Group, LG CIT, 16 Woomyeon-Dong, Seoul, Korea, Republic of
[2] Department of Ceramic Engineering, Myong Ji University, 38-2 Yongin, Kyunggi, 449-728, Korea, Republic of
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Materials Science Forum | 2000年 / 338卷
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