DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

被引：0
|
作者：
Lee, Won Sang [1 ]
Chung, Ki Woong [1 ]
Shin, Moo Whan [2 ]
机构：
[1] Device and Materials Lab., RF Device Group, LG CIT, 16 Woomyeon-Dong, Seoul, Korea, Republic of
[2] Department of Ceramic Engineering, Myong Ji University, 38-2 Yongin, Kyunggi, 449-728, Korea, Republic of
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Novel gate air cavity GaN HEMTs design for improved RF and DC performance
    Huang, Zhihui
    Sun, Huiqin
    Ding, Xiao
    Wang, Penglin
    Li, Yuan
    Xia, Fan
    Xia, Xiaoyu
    Tan, Xiuyang
    Zhang, Miao
    Ma, Jiancheng
    Xu, Liang
    Guo, Zhiyou
    RESULTS IN PHYSICS, 2021, 29
  • [42] Large-Signal Modeling Methodology for GaN HEMTs for RF Switching-Mode Power Amplifiers Design
    Jarndal, Anwar
    Aflaki, Pouya
    Negra, Renato
    Kouki, Ammar B.
    Ghannouchi, Fadhel M.
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2011, 21 (01) : 45 - 51
  • [43] Enhanced Large-signal Stability and Performance in Digital PID Control in a DC-DC Boost Converter
    Kapat, Santanu
    Hariharan, K.
    2014 IEEE 15TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL), 2014,
  • [44] Diamond Schottky p-i-n Diodes: DC, Small-Signal and Large-Signal Behavior for RF Applications
    Jha, Vishal
    Surdi, Harshad
    Koeck, Franz
    Nemanich, Robert J.
    Goodnick, Stephen M.
    Thornton, Trevor J.
    2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022), 2022, : 918 - 921
  • [45] Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
    Yadav, Yogendra K.
    Upadhyay, Bhanu B.
    Jha, Jaya
    Ganguly, Swaroop
    Saha, Dipankar
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4141 - 4146
  • [46] Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
    Jarndal, Anwar
    Aflaki, Pouya
    Degachi, Louay
    Birafane, Ahmed
    Kouki, Ammar
    Negra, Renato
    Ghannouchi, Fadhel M.
    SOLID-STATE ELECTRONICS, 2010, 54 (07) : 696 - 700
  • [47] Large-Signal Performance Optimization of Inverted-F Antenna Tuned by Switchable RF Capacitor
    Solomko, Valentyn
    Oezdamar, Oguzhan
    Weigel, Robert
    Hagelauer, Amelie
    2021 IEEE-APS TOPICAL CONFERENCE ON ANTENNAS AND PROPAGATION IN WIRELESS COMMUNICATIONS (APWC), 2021, : 21 - 25
  • [48] A Comprehensive Large-Signal RF Test System for Advanced Acoustic Device Performance and Reliability Characterization
    Gamini, Divya
    Fendrich, John
    Durham, Arthur
    Limanto, Denny
    Money, Chris
    2023 100TH ARFTG MICROWAVE MEASUREMENT CONFERENCE, ARFTG, 2023,
  • [49] LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS
    DETLEFSEN, J
    SCHUCK, WD
    NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1974, 27 (07): : 280 - 282
  • [50] InGaN Light-Emitting Diodes with Multiple-Porous GaN Structures Fabricated through a Photoelectrochemical Etching Process
    Huang, Kun-Pin
    Wu, Kaun-Chun
    Fan, Feng-Hsu
    Tseng, Wang-Po
    Shieh, Bing-Cheng
    Chen, Sy-Hann
    Lin, Chia-Feng
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (10) : R185 - R188
12345