DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

被引：0
|
作者：
Lee, Won Sang [1 ]
Chung, Ki Woong [1 ]
Shin, Moo Whan [2 ]
机构：
[1] Device and Materials Lab., RF Device Group, LG CIT, 16 Woomyeon-Dong, Seoul, Korea, Republic of
[2] Department of Ceramic Engineering, Myong Ji University, 38-2 Yongin, Kyunggi, 449-728, Korea, Republic of
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Nonlinear analysis of GaN MESFETs with volterra series using large-signal models including trapping effects
    Islam, SS
    Anwar, AFM
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (11) : 2474 - 2479
  • [22] Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process
    Oliver Breitschädel
    Bertram Kuhn
    Ferdinand Scholz
    Heinz Schweizer
    Journal of Electronic Materials, 1999, 28 : 1420 - 1423
  • [23] Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process
    Breitschädel, O
    Kuhn, B
    Scholz, F
    Schweizer, H
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) : 1420 - 1423
  • [24] Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs
    Toprak, Ahmet
    Osmanoglu, Sinan
    Ozturk, Mustafa
    Yilmaz, Dogan
    Cengiz, Omer
    Sen, Ozlem
    Butum, Bayram
    Ozcan, Sadan
    Ozbay, Ekmel
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
  • [25] Nonlinear effects in AlGaN/GaN HFET's under large-signal RF conditions
    Trew, RJ
    Davis, B
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 123 - 126
  • [26] Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs
    Jia, Yonghao
    Xu, Yuehang
    Wen, Zhang
    Wu, Yunqiu
    Guo, Yongxin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (01) : 357 - 363
  • [27] A Compact Large-Signal Model Generation of GaN HEMT for RF Circuit Design Implication
    Anand, Anupama
    Reeta
    Narang, Rakhi
    Rawal, Dipendra Singh
    Mishra, Meena
    Saxena, Manoj
    Gupta, Mridula
    2023 IEEE WIRELESS ANTENNA AND MICROWAVE SYMPOSIUM, WAMS, 2023,
  • [28] Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs
    Deng, Jie
    Wang, Weike
    Halder, Subrata
    Curtice, Walter. R.
    Hwang, James C. M.
    Adivarahan, Vinod
    Khan, M. Asif
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (12) : 2709 - 2716
  • [29] Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design
    Sattu, Ajay Kumar
    Yang, Jinwei
    Gaska, Remis
    Khan, Md Bilal
    Shur, Michael
    Simin, Grigory
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (06) : 305 - 307
  • [30] Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ SixNy on AlGaN
    Ko, Hwa-Young
    Park, Jinhong
    Lee, Hojung
    Jo, Youngje
    Song, Misun
    Jang, T.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
12345