Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process

被引：13

作者：

Breitschädel, O ^{[1
]}

Kuhn, B ^{[1
]}

Scholz, F ^{[1
]}

Schweizer, H ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 12期

关键词：

AlGaN/GaN HEMT; recess technology; ion beam etching (IBE); electron cyclotron resonance reactive ion etching (ECR-RIE);

D O I：

10.1007/s11664-999-0133-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The backward cur rent of Schottky contacts on unintentionally doped GaN samples prepared by different dry-etching methods was investigated. It was found that an ion beam etching (IBE) process with an accelerating voltage of 250 V under an angle of 20 degrees to minimize channeling achieves the best results. The backward current in this case is 4 x 10(-10) A/mu m(2) compared to the backward current of the unetched sample of I x 10(-7) A/mu m(2) at -100 V. With this process, recessed gate HEMTs on AlGaN/GaN heterostructures grown by low pressure MOVPE were fabricated and compared to HEMTs without recess. The applied gate recess etching technique improves the leakage current by nearly a factor of two. The maximum transconductance is improved from 40 mS/mm to 60 mS/mm at a gate length of 4 mu m.

引用

页码：1420 / 1423

页数：4

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