DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy

被引：0
|
作者：
机构：
[1] Higashiwaki, Masataka
[2] Kitada, Takahiro
[3] Aoki, Toyohiro
[4] Shimomura, Satoshi
[5] Yamashita, Yoshimi
[6] Endoh, Akira
[7] Hikosaka, Kohki
[8] Mimura, Takashi
[9] Matsui, Toshiaki
[10] Hiyamizu, Satoshi
来源：
Higashiwaki, Masataka | 1600年 / Japanese Journal of Applied Physics卷 / 39期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Optical properties of In0.52Al0.48As layers and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
    Kawamura, Y
    Kamada, A
    Yoshimatsu, K
    Nakao, M
    Inoue, N
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 556 - 559
  • [22] Suppression of surface segregation of silicon dopants during molecular beam epitaxy of (411)A In0.75Ga0.25As/In0.52Al0.48As pseudomorphic high electron mobility transistor structures
    Sagisaka, H.
    Kitada, T.
    Shimomura, S.
    Hiyamizu, S.
    Watanabe, I.
    Matsui, T.
    Mimura, T.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 2668 - 2671
  • [23] Single-particle relaxation times in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As QW-HEMT structure with (411) A super-flat interfaces grown by MBE
    Kitada, T
    Aoki, T
    Watanabe, I
    Kanzaki, K
    Shimomura, S
    Hiyamizu, S
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 657 - 662
  • [24] In0.53Ga0.47As/In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy
    Hiyamizu, S
    Ohno, Y
    Shimomura, S
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 225 - 229
  • [25] SOME CHARACTERISTICS OF SILICON-DOPED IN0.52AL0.48AS LAYERS GROWN LATTICE-MATCHED ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YOON, SF
    MIAO, YB
    RADHAKRISHNAN, K
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (03) : 285 - 290
  • [26] HIGH ELECTRON-MOBILITY PSEUDOMORPHIC IN0.52AL0.48AS/IN0.8GA0.2AS HETEROSTRUCTURE ON INP GROWN BY FLUX-STABILIZED MBE
    SUGIYAMA, Y
    TAKEUCHI, Y
    TACANO, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 509 - 514
  • [27] LOW-FREQUENCY AND MICROWAVE CHARACTERIZATION OF SUBMICRON-GATE IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTION METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
    KUANG, JB
    TASKER, PJ
    RATANAPHANYARAT, S
    SCHAFF, WJ
    EASTMAN, LF
    WANG, GW
    CHEN, YK
    AINA, OA
    HIER, H
    FATHIMULLA, A
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 6168 - 6174
  • [28] High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As HEMT fabricated on (411)A-oriented InP substrate
    Watanabe, I
    Shinohara, K
    Kitada, T
    Shimomura, S
    Yamashita, Y
    Endoh, A
    Mimura, T
    Matsui, T
    Hiyamizu, S
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 425 - 428
  • [29] Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy
    Kitada, T
    Aoki, T
    Watanabe, I
    Shimomura, S
    Hiyamizu, S
    APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4043 - 4045
  • [30] Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
    Shi, J.
    Wichmann, N.
    Roelens, Y.
    Bollaert, S.
    APPLIED PHYSICS LETTERS, 2011, 99 (20)
12345