Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

被引：6
|
作者：
Kitada, T [1 ]
Aoki, T [1 ]
Watanabe, I [1 ]
Shimomura, S [1 ]
Hiyamizu, S [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期
关键词：
D O I：
10.1063/1.1807023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Much enhanced electron mobility of 105 000 cm(2)/V s with a high sheet electron concentration (N-s) of 3.1x10(12) cm(-12) was obtained at 77 K in pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum well (MD-QW) grown on a (411)A InP substrate by molecular-beam epitaxy. This MD-QW has the "(411)A super-flat interfaces" (effectively atomically flat interfaces over a wafer-size area), which leads to significant reduction of interface roughness scattering at low temperatures. The highest electron mobility of the (411)A MD-QW was achieved by using pseudomorphic In0.46Al0.54As barriers. The electron mobility is 44% higher than that (73 000 cm(2)/V s at 77 K) of a similar MD-QW structure grown on a conventional (100)InP substrate. (C) 2004 American Institute of Physics.
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页码：4043 / 4045
页数：3
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