DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy

被引：0
|
作者：
机构：
[1] Higashiwaki, Masataka
[2] Kitada, Takahiro
[3] Aoki, Toyohiro
[4] Shimomura, Satoshi
[5] Yamashita, Yoshimi
[6] Endoh, Akira
[7] Hikosaka, Kohki
[8] Mimura, Takashi
[9] Matsui, Toshiaki
[10] Hiyamizu, Satoshi
来源：
Higashiwaki, Masataka | 1600年 / Japanese Journal of Applied Physics卷 / 39期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy
    Higashiwaki, M
    Kitada, T
    Aoki, T
    Shimomura, S
    Yamashita, Y
    Endoh, A
    Hikosaka, K
    Mimura, T
    Matsui, T
    Hiyamizu, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (7B): : L720 - L722
  • [2] Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As HEMTs with super-flat interfaces fabricated on (411)A-oriented InP substrates
    Higashiwaki, M
    Kitada, T
    Aoki, T
    Shimomura, S
    Yamashita, Y
    Endoh, A
    Hikosaka, K
    Mimura, T
    Matsui, T
    Hiyamizu, S
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 573 - 576
  • [3] Gate length reduction technology for pseudomorphic In0.52Al0.48As/In0.7Ga0.3As high electron mobility transistors
    Yeon, Seong-Jin
    Lee, Jongwon
    Seol, Gyungseon
    Seo, Kwangseok
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2296 - 2299
  • [4] Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs
    Shin, Seung Heon
    Kim, Tae-Woo
    Song, Jong-In
    Jang, Jae-Hyung
    SOLID-STATE ELECTRONICS, 2011, 62 (01) : 106 - 109
  • [5] Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
    Kitada, T.
    Kusuonki, S.
    Kinouchi, M.
    Morita, K.
    Isu, T.
    Shimomura, S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2753 - +
  • [6] High performance 50nm T-Gate In0.52Al0.48As/In0.70Ga0.30As pseudomorphic high electron mobility transistors
    Cao, X
    Thoms, S
    McLelland, H
    Elgaid, K
    Stanley, C
    Thayne, I
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 292 - 294
  • [7] 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT
    Huang Jie
    Guo Tianyi
    Zhang Haiying
    Xu Jingbo
    Fu Xiaojun
    Yang Hao
    Niu Jiebin
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (07)
  • [8] 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT
    黄杰
    郭天义
    张海英
    徐静波
    付晓君
    杨浩
    牛洁斌
    Journal of Semiconductors, 2010, (07) : 46 - 48
  • [9] Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy
    Katoh, S
    Sagisaka, H
    Yamamoto, M
    Watanabe, I
    Kitada, T
    Shimomura, S
    Hiyamizu, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1154 - 1157
  • [10] Mobility enhancement by reduced remote impurity scattering in a pseudomorphic ln0.7Ga0.3As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411) A super-flat interfaces grown by molecular-beam epitaxy
    Watanabe, I
    Kanzaki, K
    Aoki, T
    Kitada, T
    Shimomura, S
    Hiyamizu, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1515 - 1518
12345