DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy

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[1] Higashiwaki, Masataka
[2] Kitada, Takahiro
[3] Aoki, Toyohiro
[4] Shimomura, Satoshi
[5] Yamashita, Yoshimi
[6] Endoh, Akira
[7] Hikosaka, Kohki
[8] Mimura, Takashi
[9] Matsui, Toshiaki
[10] Hiyamizu, Satoshi
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Higashiwaki, Masataka | 1600年 / Japanese Journal of Applied Physics卷 / 39期
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