Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

被引：0
|
作者：
Japan Atomic Energy Agency, Takasaki, Gunma [1 ]
370-1292, Japan
不详 [2 ]
338-8570, Japan
不详 [3 ]
352-8666, Japan
机构：
来源：
Jpn. J. Appl. Phys. | / 1卷
关键词：
Engineering Village;
D O I：
01AD01
中图分类号：
学科分类号：
摘要：
Channel mobility - Metal-oxide-semiconductor transistor - Negative voltage - Power metal oxide semiconductor field effect transistor (MOSFETs) - Radiation response - Silicon carbides (SiC) - Subthreshold voltages - Vertical structures
引用
下载
收藏
相关论文
共 50 条
  • [41] Radiation dosimeter based on Metal-Oxide-Semiconductor structures containing silicon nanocrystals
    Nedev, Nicola
    Manolov, Emil
    Nesheva, Diana
    Krezhov, Kiril
    Nedev, Roumen
    Curiel, Mario
    Valdez, Benjamin
    Mladenov, Alexander
    Levi, Zelma
    MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS, 2012, 495 : 120 - +
  • [42] Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry
    Nesheva, Diana
    Nedev, Nikola
    Curiel, Mario
    Dzhurkov, Valeri
    Arias, Abraham
    Manolov, Emil
    Mateos, David
    Valdez, Benjamin
    Bineva, Irina
    Herrera, Rigoberto
    OPEN PHYSICS, 2015, 13 (01): : 63 - 71
  • [43] EFFECTS OF HIGH-PRESSURE ON SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    CRUMBAKER, TE
    SITES, JR
    SPAIN, IL
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2328 - 2331
  • [44] CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH VERY THIN GATE OXIDE
    HUNG, KK
    CHENG, YC
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 816 - 823
  • [45] Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide
    J Appl Phys, 5 (2943):
  • [46] Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide
    Treu, M
    Burte, EP
    Schorner, R
    Friedrichs, P
    Stephani, D
    Ryssel, H
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2943 - 2948
  • [47] Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide
    Koo, SM
    Lee, SK
    Zetterling, CM
    Östling, M
    SOLID-STATE ELECTRONICS, 2002, 46 (09) : 1375 - 1380
  • [48] Effects of successive annealing of oxides on electrical characteristics of silicon carbide metal-oxide-semiconductor structures
    Yoshikawa, M
    Satoh, M
    Ohshima, T
    Itoh, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1009 - 1012
  • [49] Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors
    Chen, Kuan-Chu
    Godfrin, Clement
    Simion, George
    Fattal, Imri
    Jussot, Julien
    Kubicek, Stefan
    Beyne, Sofie
    Raes, Bart
    Loenders, Arne
    Kao, Kuo-Hsing
    Wan, Danny
    De Greve, Kristiaan
    Physical Review B, 2025, 111 (12)
  • [50] Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices
    Saks, NS
    Ancona, MG
    Rendell, RW
    APPLIED PHYSICS LETTERS, 2002, 80 (17) : 3219 - 3221
12345