Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

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作者：

Japan Atomic Energy Agency, Takasaki, Gunma ^{[1
]}

370-1292, Japan

不详 ^{[2
]}

338-8570, Japan

不详 ^{[3
]}

352-8666, Japan

机构：

来源：

Jpn. J. Appl. Phys. | / 1卷

关键词：

Engineering Village;

D O I：

01AD01

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学科分类号：

摘要：

Channel mobility - Metal-oxide-semiconductor transistor - Negative voltage - Power metal oxide semiconductor field effect transistor (MOSFETs) - Radiation response - Silicon carbides (SiC) - Subthreshold voltages - Vertical structures

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