Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

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作者：
Japan Atomic Energy Agency, Takasaki, Gunma [1 ]
370-1292, Japan
不详 [2 ]
338-8570, Japan
不详 [3 ]
352-8666, Japan
机构：
来源：
Jpn. J. Appl. Phys. | / 1卷
关键词：
Engineering Village;
D O I：
01AD01
中图分类号：
学科分类号：
摘要：
Channel mobility - Metal-oxide-semiconductor transistor - Negative voltage - Power metal oxide semiconductor field effect transistor (MOSFETs) - Radiation response - Silicon carbides (SiC) - Subthreshold voltages - Vertical structures
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