Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear Dielectric microscopy

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Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan [1 ]
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| 1600年 / 2400-2404卷 / April 2005期
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