A new analytical model of breakdown voltage for the SD LDMOS

被引：0
|
作者：
Li, Qi [1 ]
Zhang, Bo [1 ]
Li, Zhao-Ji [1 ]
机构：
[1] IC Design Center, University of Electronic Science and Technology, Chengdu 610054, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2008年 / 57卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
下载
收藏
页码：1891 / 1896
相关论文
共 50 条
  • [1] A new analytical model of breakdown voltage for the SD LDMOS
    Li Qi
    Zhang Bo
    Li Zhao-Ji
    ACTA PHYSICA SINICA, 2008, 57 (03) : 1891 - 1896
  • [2] An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS
    Chung, SK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) : 1006 - 1009
  • [3] A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
    Hu, Xia-Rong
    Zhang, Bo
    Luo, Xiao-Rong
    Wang, Yuan-Gang
    Lei, Tian-Fei
    Li, Zhao-Ji
    CHINESE PHYSICS B, 2012, 21 (07)
  • [4] A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
    胡夏融
    张波
    罗小蓉
    王元刚
    雷天飞
    李肇基
    Chinese Physics B, 2012, 21 (07) : 596 - 599
  • [5] Analytical model of surface field distribution and breakdown voltage for RESURF LDMOS transistor
    He, Jin
    Zhang, Xing
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1102 - 1106
  • [6] Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS
    He, J
    Zhang, X
    Huang, R
    Wang, YY
    CHINESE JOURNAL OF ELECTRONICS, 2001, 10 (02): : 210 - 213
  • [7] Analytical Model and New Structure of the Variable-k Dielectric Trench LDMOS With Improved Breakdown Voltage and Specific ON-Resistance
    Zhou, Kun
    Luo, Xiaorong
    Li, Zhaoji
    Zhang, Bo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3334 - 3340
  • [8] Analytical breakdown voltage model for a partial SOI-LDMOS transistor with a buried oxide step structure
    Sahoo, Jagamohan
    Mahapatra, Rajat
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (05) : 1711 - 1720
  • [9] Analytical breakdown voltage model for a partial SOI-LDMOS transistor with a buried oxide step structure
    Jagamohan Sahoo
    Rajat Mahapatra
    Journal of Computational Electronics, 2021, 20 : 1711 - 1720
  • [10] An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield
    张文敏
    张为
    付军
    王玉东
    Journal of Semiconductors, 2012, 33 (04) : 32 - 37
12345