A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

被引：0
|
作者：
胡夏融 [1 ]
张波 [1 ]
罗小蓉 [1 ]
王元刚 [1 ]
雷天飞 [1 ]
李肇基 [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
来源：
Chinese Physics B | 2012年 / 21卷 / 07期
基金：
中国国家自然科学基金;
关键词：
silicon on insulator (SOI); trench; lateral double-diffused metal-oxide-semiconductor (LDMOS); breakdown voltage;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters such as the doping concentration of the drift region, and the depth and width of the trench on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All the analytical results are in good agreement with the simulation results.
引用
收藏
页码：596 / 599
页数：4
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