A new analytical model of breakdown voltage for the SD LDMOS

被引：0
|
作者：
Li, Qi [1 ]
Zhang, Bo [1 ]
Li, Zhao-Ji [1 ]
机构：
[1] IC Design Center, University of Electronic Science and Technology, Chengdu 610054, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2008年 / 57卷 / 03期
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D O I：
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摘要：
15
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页码：1891 / 1896
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