Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

被引：0
|
作者：
Liu, Chee-Wee [1 ]
Lee, Min-Hung [1 ]
Chang, Shu-Tong [1 ]
Chen, Miin-Jang [1 ]
Lin, Ching-Fuh [1 ]
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
来源：
| 2000年 / JJAP, Tokyo卷 / 39期
关键词：
Electroluminescence - Electrons - Infrared radiation - Interfaces (materials) - Mathematical models - MOS devices - Phonons - Photoluminescence - Substrates - Surface roughness - Temperature;
D O I：
10.1143/jjap.39.l1016
中图分类号：
学科分类号：
摘要：
We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.
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