Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

被引：0
|
作者：
Jaumann, M. [1 ]
Stimmer, J. [1 ]
Schittenhelm, P. [1 ]
Nuetzel, J.F. [1 ]
Abstreiter, G. [1 ]
Neufeld, E. [1 ]
Hollaender, B. [1 ]
Buchal, Ch. [1 ]
机构：
[1] Technische Universitaet Muenchen, Garching, Germany
来源：
Applied Surface Science | 1996年 / 102卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：327 / 330
相关论文
共 50 条
  • [1] Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
    Jaumann, M
    Stimmer, J
    Schittenhelm, P
    Nutzel, JF
    Abstreiter, G
    Neufeld, E
    Hollander, B
    Buchal, C
    APPLIED SURFACE SCIENCE, 1996, 102 : 327 - 330
  • [2] ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON
    LOMBARDO, S
    CAMPISANO, SU
    VANDENHOVEN, GN
    CACCIATO, A
    POLMAN, A
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1942 - 1944
  • [3] Donor centers in Er-implanted silicon
    Emtsev, VV
    Andreev, BA
    Poloskin, DS
    Sobolev, NA
    Shek, EI
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1515 - 1520
  • [4] LUMINESCENCE OF ER-IMPLANTED POROUS SILICON
    LI, Y
    ZHOU, YD
    LI, JS
    JIANG, H
    JIN, YX
    SOLID STATE COMMUNICATIONS, 1995, 96 (05) : 317 - 320
  • [5] Investigation of Crystallization Incorporation of Er-implanted Silicon
    万亚
    李岱青
    章蓓
    陈孔军
    朱沛然
    徐天冰
    JOURNALOFRAREEARTHS, 1995, (02) : 109 - 113
  • [6] INVESTIGATION OF CRYSTALLIZATION INCORPORATION OF ER-IMPLANTED SILICON
    WAN, Y
    LI, DQ
    ZHANG, B
    CHEN, KJ
    ZHU, PR
    XU, TB
    JOURNAL OF RARE EARTHS, 1995, 13 (02) : 109 - 113
  • [7] Structural and optical characterisation of Er-implanted silicon
    Huda, MQ
    Taskin, T
    Evans, JH
    Peaker, AR
    Liu, P
    Zhang, JP
    Curello, G
    Wilson, RJ
    Jafri, ZH
    Rao, SS
    Hemment, PLF
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 461 - 464
  • [8] Optically active centers in er-implanted silicon
    Przybylinska, H.
    Jantsch, W.
    Hendorfer, G.
    Palmetshofer, L.
    Wilson, R.J.
    Sealy, B.J.
    Acta Physica Polonica A, 1995, 88 (5 pt 1)
  • [9] 1.5 μm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy
    Serna, R., 1600, (75):
  • [10] Dislocation-related luminescence in Er-implanted silicon
    Sobolev, NA
    Gusev, OB
    Shek, EI
    Vdovin, VI
    Yugova, TG
    Emel'yanov, AM
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 357 - 361
12345