Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

被引：0
|
作者：
Liu, Chee-Wee [1 ]
Lee, Min-Hung [1 ]
Chang, Shu-Tong [1 ]
Chen, Miin-Jang [1 ]
Lin, Ching-Fuh [1 ]
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
来源：
| 2000年 / JJAP, Tokyo卷 / 39期
关键词：
Electroluminescence - Electrons - Infrared radiation - Interfaces (materials) - Mathematical models - MOS devices - Phonons - Photoluminescence - Substrates - Surface roughness - Temperature;
D O I：
10.1143/jjap.39.l1016
中图分类号：
学科分类号：
摘要：
We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.
引用
收藏
相关论文
共 50 条
  • [21] Room temperature electroluminescence from metal oxide-silicon surface-barrier diode
    Malik, O
    Grimalsky, V
    Torres, A
    De la Hidalga, J
    16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2004, : 471 - 474
  • [22] Room-temperature near-infrared electroluminescence from boron-diffused silicon pn-junction diodes
    Li, Si
    Gao, Yuhan
    Fan, Ruixin
    Li, Dongsheng
    Yang, Deren
    FRONTIERS IN MATERIALS, 2015, 2
  • [23] Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
    Oehme, M.
    Werner, J.
    Gollhofer, M.
    Schmid, M.
    Kaschel, M.
    Kasper, E.
    Schulze, J.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (23) : 1751 - 1753
  • [24] Room-temperature near-ultraviolet electroluminescence from a linear silicon chain
    NTT Basic Research Lab, Kanagawa, Japan
    Appl Phys Lett, 23 (3326-3328):
  • [25] Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
    Gusev, OB
    Bresler, MS
    Terukov, EI
    Tsendin, KD
    Yassievich, IN
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 335 - 338
  • [26] Room-temperature near-ultraviolet electroluminescence from a linear silicon chain
    Yuan, CH
    Hoshino, S
    Toyoda, S
    Suzuki, H
    Fujiki, M
    Matsumoto, N
    APPLIED PHYSICS LETTERS, 1997, 71 (23) : 3326 - 3328
  • [27] Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
    Gusev, OB
    Bresler, MS
    Terukov, EI
    Tsendin, KD
    Yassievich, IN
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 335 - 338
  • [28] Room-temperature 2μm luminescence from Tm doped silicon light emitting diodes and SOI substrates
    Zhou, Shihao
    Milosavljevic, M.
    Xia, Xiaohong
    Gao, Yun
    Lourenco, M. A.
    Homewood, K. P.
    CURRENT APPLIED PHYSICS, 2021, 31 : 38 - 45
  • [29] Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes
    Jan, Sun-Rong
    Cheng, Tzu-Huan
    Hung, Tzer-An
    Kuo, Ping-Sheng
    Liao, Ming Han
    Deng, Yu
    Liu, Chee Wee
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (12) : 3590 - 3593
  • [30] Electroluminescence at Si bandgap energy from metal-oxide-semiconductor tunneling diodes
    Lin, CF
    Chen, MJ
    Lee, MH
    Liu, CW
    SILICON-BASED AND HYBRID OPTOELECTRONICS III, 2001, 4293 : 147 - 154
12345