Novel Multi-Level Coding and Architecture Enabling Fast Random Access for Flash Memory

被引:0
|
作者
Shibata, Noboru [1 ]
Uchikawa, Hironori [1 ]
Shibuya, Taira [2 ]
Inoue, Hirofumi [3 ]
机构
[1] Kioxia Corp, Inst Memory Technol Res & Dev, Tokyo, Japan
[2] Kioxia Corp, Memory Div, Tokyo, Japan
[3] Kioxia Corp, Memory Dev Strategy Div, Tokyo, Japan
关键词
flash memory; storage class memory (SCM); random read latency; SLC (1bit/cell); X1.5 (3bit/2cell); MLC (2bit/cell); TLC (3bit/cell); QLC (4bit/cell); PLC (5bit/cell); HLC (6bit/cell);
D O I
10.1109/IMW59701.2024.10536951
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This study introduces a novel multi-level coding and architecture designed to enhance random access time in multi-level flash memory. By employing a strategy of sharing and storing multi-level data across multiple memory cells, we address the challenge of increased read cycles typically associated with multi-level data. This architecture, which does not require new processes or materials, achieves one-cycle reading in MLC, equating its random access time with that of SLC, and ensures rapid random access in TLC.
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页数:4
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