A Fast-Transient Output-Capacitor-Less Low-Dropout Regulator With Direct-Coupled Slew Rate Enhancement

被引:0
|
作者
Kao, Shao-Ku [1 ,2 ]
Chen, Jian-Jiun [1 ]
Liao, Chien-Hung [2 ]
Lu, Yu-Jen [3 ,4 ]
Wang, Jer-Chyi [3 ,5 ,6 ]
机构
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[2] Chang Gung Mem Hosp, Dept Trauma & Emergency Surg, Taoyuan 33305, Taiwan
[3] Chang Gung Mem Hosp, Dept Neurosurg, Taoyuan 33305, Taiwan
[4] Chang Gung Univ, Sch Tradit Chinese Med, Taoyuan 33302, Taiwan
[5] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[6] Ming Chi Univ Technol, Dept Elect Engn, New Taipei City 243303, Taiwan
来源
IEEE ACCESS | 2024年 / 12卷
关键词
Fast transient; overshoot reduce; undershoot reduce; slew rate enhance; direct-coupled; low-dropout (LDO) regulator; output capacitorless; QUIESCENT CURRENT; LDO REGULATOR; DESIGN;
D O I
10.1109/ACCESS.2024.3398290
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
An output capacitorless low-dropout (OCL-LDO) regulator with a direct-coupled slew rate enhancement (DCSRE) technique. This paper proposes a low-dropout regulator with a simple structure, fast transient response, and the ability to reduce overshoot and undershoot, suitable for system-on-chip (SOC) integration. Instead of a high-pass filter, an error amplifier is used to couple the transient signal to achieve better transient response with higher current efficiency and no significant increase in chip area and power consumption, eliminating the tradeoff with the high-pass filter cutoff frequency and simplifying design considerations. Furthermore, the proposed technique would not affect other characteristics of the LDO regulator such as stability, frequency compensation, line regulation, and load regulation. In addition, the analysis is carried out for the case of many poles and zeros in the unity-gain bandwidth (GBW). From the measurement result, the proposed LDO regulator regulated the output voltage at 1 V from the input range 1.8V up to 3.3V, with $28.8\mu $ A quiescent. The output voltage recovers in $0.23\mu $ s at a voltage spike of less than 43.5mV, where the load current switches from $100\mu $ A to 100mA in 100ns. The LDO regulator is fabricated in a $0.18\mu $ m CMOS process with a core area of 0.0174mm2.
引用
收藏
页码:66539 / 66555
页数:17
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