An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement

被引：4

作者：

Ni, Shenglan ^{[1
,2
]}

Chen, Zhizhi ^{[1
,2
]}

Hu, Chenkai ^{[1
,2
]}

Chen, Houpeng ^{[1
]}

Wang, Qian ^{[1
]}

Li, Xi ^{[1
]}

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China

来源：

MICROMACHINES | 2022年 / 13卷 / 10期

基金：

中国国家自然科学基金;

关键词：

low-dropout regulator (LDO); output-capacitorless; push-pull; slew-rate enhancement; QUIESCENT CURRENT; LDO; TRANSCONDUCTANCE; COMPENSATION;

D O I：

10.3390/mi13101594

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A novel output-capacitorless low-dropout regulator (OCL-LDO) with an embedded slewrate-enhancement (SRE) circuit is presented in this paper. The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power transistor when a large voltage spike at the output is detected. In addition, a feed-forward transconductance cell is introduced to form a push-pull output structure with the power transistor. The simulation results show that the maximum transient output voltage variation is 23.5 mV when the load current I-LO(AD) is stepped from 0 to 100 mA in 100 ns with a load capacitance of 100 pF, and the settling time is 1.2 mu s. The proposed OCL-LDO consumes a quiescent current of 30 mu A and has a dropout voltage of 200 mV for the maximum output current of 100 mA.

引用

页数：12

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