An Output-capacitor-less Low-dropout Regulator with Transient-improved Technique

被引:0
|
作者
Liu, Xin [1 ,2 ]
Liu, Yu [1 ,2 ]
Xiao, Yanbin [1 ,2 ]
Fan, Xiaohua [1 ]
Zhang, Haiying [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Beijing Key Lab RFIC Technol Next Generat Commun, Beijing 100029, Peoples R China
关键词
LDO; output-capacitor-less; transient-improved; slew-rate; LDO;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A transient-improved output-capacitor-less low dropout (LDO) regulator based on single Miller capacitor feedforward compensation (SMFFC) is presented in this paper. With the SMFFC, the slew-rate at the gate of power transistor is enhanced, which results in an improved transient response during a fast load current transient. The die area of the LDO implemented in 130nm CMOS process is only 0.0113mm(2). Experimental results show that the developed LDO is stable for C-L=OpF within 0-50mA full load range. Besides, the output voltage of LDO can recover within 190ns with less than 75mV voltage spike when the load current changes from lmA to 50mA.
引用
收藏
页码:124 / 127
页数:4
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